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  savantic semiconductor product specification silicon pnp power transistors 2SA1535 2SA1535a description with to-220fa package complement to type 2sc3944/3944a optimum for the driver-stage of a 60w to 100w output amplifier applications for low-frequency driver and high power amplification pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit 2SA1535 -150 v cbo collector-base voltage 2SA1535a open emitter -180 v 2SA1535 -150 v ceo collector-emitter voltage 2SA1535a open base -180 v v ebo emitter-base voltage open collector -5 v i c collector current -1.0 a i cm collector current-peak -1.5 a t a =25 2.0 p c collectorl power dissipation t c =25 15 w t j junction temperature 150  t stg storage temperature -55~150 
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1535 2SA1535a characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2SA1535 i c =-1ma; i b =0 -150 v (br)ceo collector-emitter breakdown voltage 2SA1535a i c =-0.1ma; i b =0 -180 v v (br)ebo emitter-base breakdown voltage i e =-10a; i c =0 -5 v v cesat collector-emitter saturation voltage i c =-0.5 a;i b =-50m a -2.0 v v besat base-emitter saturation voltage i c =-0.5 a;i b =-50m a -2.0 v i cbo collector cut-off current v cb =-150v; i e =0 -10 a h fe-1 dc current gain i c =-150ma ; v ce =-10v 90 330 h fe-2 dc current gain i c =-500ma ; v ce =-5v 50 f t transition frequency i c =-50ma ; v cb =-10v 200 mhz c ob output capacitance i e =0; v cb =-10v;f=1mhz 30 pf  h fe-1 classifications q r s 90-155 130-220 185-330
savantic semiconductor product specification 3 silicon pnp power transistors 2SA1535 2SA1535a package outline fig.2 outline dimensions (unindicated tolerance:0.15 mm)
savantic semiconductor product specification 4 silicon pnp power transistors 2SA1535 2SA1535a


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